US 12,116,520 B2
Composition for etching, method for etching insulator and method for manufacturing semiconductor device, and novel compounds
Cheol Woo Kim, Daejeon (KR); Min Kyung Seon, Daejeon (KR); Yu Na Shim, Daejeon (KR); Jae Hoon Kwak, Yeongju-si (KR); Young Bom Kim, Yeongju-si (KR); Jong Ho Lee, Yeongju-si (KR); and Jin Kyung Jo, Yeongju-si (KR)
Assigned to SK Innovation Co., Ltd., Seoul (KR); and SK Inc., Seoul (KR)
Filed by SK Innovation Co., Ltd., Seoul (KR); and SK Inc., Seoul (KR)
Filed on Jun. 14, 2021, as Appl. No. 17/346,641.
Application 17/346,641 is a division of application No. 16/886,944, filed on May 29, 2020, granted, now 11,066,601.
Claims priority of application No. 10-2019-0063737 (KR), filed on May 30, 2019.
Prior Publication US 2021/0309914 A1, Oct. 7, 2021
Int. Cl. C09K 13/06 (2006.01); C07F 7/18 (2006.01); H01L 21/4757 (2006.01); H01L 21/311 (2006.01)
CPC C09K 13/06 (2013.01) [C07F 7/1804 (2013.01); H01L 21/47573 (2013.01); H01L 21/31111 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A compound represented by following Formula 1:

OG Complex Work Unit Chemistry
wherein, in Formula 1,
A is an n-valent radical, where n is an integer of 1 to 3,
L is a direct bond or C1-C3 hydrocarbylene,
Y is selected from O and S,
X and Z are independently selected from N, O and S, with the proviso that X and Z are not both N,
Ra and Rb are independently an unshared electron pair, hydrogen, or a substituted or unsubstituted hydrocarbyl group
Rc is C1-C20 alkyl, C6-C20 aryl, or a functional group represented by the following formula:

OG Complex Work Unit Chemistry
where R4 to R9 are independently hydrogen, a hydrocarbyl group, or a non-hydrocarbyl group, and
L1 is a direct bond or hydrocarbylene.