US 12,116,516 B2
Metallic structure for optical semiconductor device, method for producing the same, and optical semiconductor device using the same
Yasuo Kato, Anan (JP); and Kazuya Matsuda, Anan (JP)
Assigned to NICHIA CORPORATION, Anan (JP)
Filed by NICHIA CORPORATION, Anan (JP)
Filed on Jan. 14, 2022, as Appl. No. 17/576,221.
Application 17/576,221 is a continuation of application No. 16/584,587, filed on Sep. 26, 2019, granted, now 11,264,546.
Claims priority of application No. 2018-182720 (JP), filed on Sep. 27, 2018.
Prior Publication US 2022/0140213 A1, May 5, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/495 (2006.01); C09K 11/77 (2006.01); H01L 33/48 (2010.01); H01L 33/50 (2010.01); H01L 33/56 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01S 5/0232 (2021.01)
CPC C09K 11/7774 (2013.01) [H01L 33/486 (2013.01); H01L 33/502 (2013.01); H01L 33/56 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01S 5/0232 (2021.01); H01L 2933/0033 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method for producing a metallic structure for an optical semiconductor device, which comprises forming metallic layers on a base body in a following order of steps
forming a nickel or nickel alloy plated layer on the base body,
forming a rhodium, palladium, rhodium alloy, or palladium alloy plated layer on the nickel or nickel alloy plated layer,
forming a gold or gold alloy plated layer on the rhodium, palladium, rhodium alloy, or palladium alloy plated layer, and
forming a silver or silver alloy plated layer on the gold or gold alloy plated layer
wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 μm or more and 0.01 μm or less.