US 12,116,503 B2
Polishing composition for semiconductor process and method for manufacturing semiconductor device by using the same
Seung Chul Hong, Seoul (KR); Deok Su Han, Seoul (KR); Jang Kuk Kwon, Seoul (KR); and Han Teo Park, Seoul (KR)
Assigned to SK ENPULSE CO., LTD., Gyeonggi-do (KR)
Filed by SK enpulse Co., Ltd., Gyeonggi-do (KR)
Filed on May 1, 2022, as Appl. No. 17/734,073.
Claims priority of application No. 10-2021-0056409 (KR), filed on Apr. 30, 2021.
Prior Publication US 2022/0363948 A1, Nov. 17, 2022
Int. Cl. C09G 1/02 (2006.01); H01L 21/321 (2006.01)
CPC C09G 1/02 (2013.01) [H01L 21/3212 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A polishing composition for a semiconductor process, comprising:
water; and
a polishing particle,
wherein the polishing particle includes a functional group bonded to a surface of the polishing particle,
the functional group includes an amine group, and
a polishing selectivity of a silicon nitride layer to a boron-doped polysilicon layer is 1:100 to 1:600,
wherein the content of the amine group is 0.0185 wt % to 0.05 wt %, based on the total weight of the polishing composition.