US 12,116,502 B2
Self-stopping polishing composition and method for high topological selectivity
Juyeon Chang, Bolingbrook, IL (US); Sudeep Pallikkara Kuttiatoor, Naperville, IL (US); Sajo Naik, Naperville, IL (US); Elliot Knapton, Aurora, IL (US); Jinfeng Wang, Naperville, IL (US); and Michael Willhoff, Naperville, IL (US)
Assigned to CMC Materials LLC, Aurora, IL (US)
Filed by CMC Materials, Inc., Aurora, IL (US)
Filed on Dec. 21, 2021, as Appl. No. 17/557,412.
Claims priority of provisional application 63/128,445, filed on Dec. 21, 2020.
Prior Publication US 2022/0195244 A1, Jun. 23, 2022
Int. Cl. C09G 1/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01)
CPC C09G 1/02 (2013.01) [H01L 21/31053 (2013.01); H01L 21/3212 (2013.01)] 25 Claims
 
1. A chemical-mechanical polishing composition comprising:
(a) an abrasive selected from a ceria abrasive, a zirconia abrasive, and a combination thereof;
(b) a self-stopping agent selected from a compound of formula (I):

OG Complex Work Unit Chemistry
wherein R is selected from the group consisting of hydrogen, alkyl, cycloalkyl, aryl, heterocyclic alkyl, and heterocyclic aryl, each of which may be substituted or unsubstituted;
(c) a cationic monomer; and
(d) water,
wherein the polishing composition has a pH of about 5.5 to about 8.