US 12,115,603 B2
Bonded body, ceramic copper circuit substrate, and semiconductor device
Maki Yonetsu, Mitaka (JP); Seiichi Suenaga, Yokohama (JP); Sachiko Fujisawa, Kawasaki (JP); and Takashi Sano, Fujisawa (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA MATERIALS CO., LTD., Yokohama (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA MATERIALS CO., LTD., Yokohama (JP)
Filed on Nov. 10, 2022, as Appl. No. 18/054,208.
Application 18/054,208 is a continuation of application No. PCT/JP2021/018591, filed on May 17, 2021.
Claims priority of application No. 2020-087824 (JP), filed on May 20, 2020; and application No. 2020-126587 (JP), filed on Jul. 27, 2020.
Prior Publication US 2023/0080016 A1, Mar. 16, 2023
Int. Cl. B23K 35/30 (2006.01); H05K 1/03 (2006.01); B23K 1/00 (2006.01); B23K 101/40 (2006.01); B23K 103/00 (2006.01); H01L 23/15 (2006.01); H05K 1/09 (2006.01)
CPC B23K 35/3006 (2013.01) [B23K 35/302 (2013.01); H05K 1/0306 (2013.01); B23K 1/0016 (2013.01); B23K 2101/40 (2018.08); B23K 2103/56 (2018.08); H01L 23/15 (2013.01); H05K 1/09 (2013.01); H05K 2201/0338 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A bonded body, comprising:
a ceramic substrate;
a copper plate; and
a bonding layer located on at least one surface of the ceramic substrate,
the bonding layer bonding the ceramic substrate and the copper plate,
the bonding layer including titanium,
the bonding layer including
a first region including a layer, the layer being formed at an interface of the bonding layer with the ceramic substrate, the layer including titanium as a major component, and
a second region positioned between the first region and the copper plate, wherein
a ratio M1/M2 of a titanium concentration M1 at % in the first region and a titanium concentration M2 at % in the second region being not less than 0.5 and not more than 5 when the Ti concentrations are measured by EDX respectively in measurement regions in the first and second regions, each of the measurement regions having an area of 200 μm×thickness, and
the titanium concentration M2 in the second region is within a range of not less than 0.5 at % and not more than 15 at %.