US 12,446,480 B2
Top contact on resistive random access memory
Soon-Cheon Seo, Glenmont, NY (US); Chanro Park, Clifton Park, NY (US); and Takashi Ando, Eastchester, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Dec. 20, 2022, as Appl. No. 18/068,758.
Prior Publication US 2024/0206352 A1, Jun. 20, 2024
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01)
CPC H10N 70/8833 (2023.02) [H10B 63/80 (2023.02); H10N 70/023 (2023.02); H10N 70/026 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/841 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A memory device comprising:
a trench to a first electrically conductive structure;
a first electrode of a conformal electrically conductive material contained within the trench in electrical communication with the first electrically conductive structure and is present on sidewalls of the trench;
a switching layer is present in the trench on the first electrode and extends outside the trench;
a second electrode present on the switching layer overfilling the trench; and
a contact positioned on a portion of the second electrode that is overfilling the trench to provide that the contact is horizontally offset from the first electrode that is present in the trench.