US 12,446,478 B2
Phase change memory unit and preparation method therefor
Min Zhong, Shanghai (CN); and Gaoming Feng, Shanghai (CN)
Assigned to SHANGHAI IC R&D CENTER CO., LTD., Shanghai (CN)
Appl. No. 18/270,243
Filed by SHANGHAI IC R&D CENTER CO., LTD., Shanghai (CN)
PCT Filed Dec. 24, 2021, PCT No. PCT/CN2021/141209
§ 371(c)(1), (2) Date Jun. 29, 2023,
PCT Pub. No. WO2022/143461, PCT Pub. Date Jul. 7, 2022.
Claims priority of application No. 202011608134.3 (CN), filed on Dec. 30, 2020.
Prior Publication US 2024/0065120 A1, Feb. 22, 2024
Int. Cl. H10N 70/00 (2023.01); H10B 63/10 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/8413 (2023.02) [H10B 63/10 (2023.02); H10N 70/066 (2023.02); H10N 70/231 (2023.02); H10N 70/8265 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A phase change memory unit, comprising from bottom to top: a bottom electrode, a phase change cell, a heating electrode and a top electrode which are formed on a substrate; wherein,
the phase change cell is a column vertically connected to the bottom electrode, which sequentially comprises a columnar phase change material layer, a hollow columnar heat dissipation layer and a hollow columnar switch layer from inside to outside; the top electrode, the heating electrode and the phase change material layer are connected sequentially from top to bottom, and the switch layer is connected to the bottom electrode, wherein a cross-section of the phase change cell is one or more combinations of a circle, an ellipse, a rectangle, a rhombus and a polygon.