| CPC H10N 70/231 (2023.02) [G11C 13/0004 (2013.01); H10N 70/026 (2023.02); H10N 70/041 (2023.02); H10N 70/8613 (2023.02); H10N 70/8828 (2023.02)] | 15 Claims |

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1. A device having:
a multilayer composite phase change material structure comprising:
a bottom SbTe PCM layer of a first PCM material having a first metallic doping;
a first composite PCM layer on the bottom PCM layer, wherein the first composite PCM layer comprises at least:
a first composite layer, comprising said first PCM material having a second metallic doping; and
a second composite layer, comprising said first SbTe PCM material undoped, on the first composite layer; and
a top PCM layer, comprising first SbTe PCM material having said first metallic doping, on the composite PCM layer.
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