| CPC H10N 50/80 (2023.02) [H10B 61/00 (2023.02); H10N 50/01 (2023.02)] | 19 Claims |
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1. A magnetic memory device comprising:
a first magnetic pattern and a second magnetic pattern that are sequentially stacked on a substrate;
a tunnel barrier pattern between the first magnetic pattern and the second magnetic pattern;
a lower electrode between the substrate and the first magnetic pattern;
a blocking pattern between the lower electrode and the first magnetic pattern;
a metal oxide pattern between the blocking pattern and the first magnetic pattern;
a buffer pattern between the metal oxide pattern and the first magnetic pattern; and
a seed pattern between the buffer pattern and the first magnetic pattern,
wherein the lower electrode, the blocking pattern, the metal oxide pattern, the buffer pattern, and the seed pattern include first, second, third, fourth, and fifth non-magnetic metals, respectively,
wherein at least a portion of the blocking pattern and the metal oxide pattern has an amorphous phase,
wherein the buffer pattern has a crystalline phase, and
wherein the blocking pattern, the metal oxide pattern, and the buffer pattern are sequentially stacked between the lower electrode and the seed pattern.
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