US 12,446,452 B2
Method of manufacturing display device
Yuko Matsumoto, Tokyo (JP)
Assigned to Magnolia White Corporation, Tokyo (JP)
Filed by Magnolia White Corporation, Tokyo (JP)
Filed on Jan. 24, 2023, as Appl. No. 18/158,481.
Claims priority of application No. 2022-011094 (JP), filed on Jan. 27, 2022.
Prior Publication US 2023/0240122 A1, Jul. 27, 2023
Int. Cl. H10K 71/00 (2023.01); H10K 59/12 (2023.01); H10K 59/122 (2023.01); H10K 59/35 (2023.01); H10K 59/80 (2023.01); H10K 71/20 (2023.01)
CPC H10K 71/00 (2023.02) [H10K 59/1201 (2023.02); H10K 59/122 (2023.02); H10K 59/873 (2023.02); H10K 71/231 (2023.02); H10K 59/35 (2023.02); H10K 59/353 (2023.02); H10K 59/871 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A method of manufacturing a display device, comprising:
preparing a processing substrate in which a lower electrode, a rib having an aperture overlapping the lower electrode, and a partition including a lower portion disposed on the rib and an upper portion disposed on the lower portion and protruding from a side surface of the lower portion are formed above a substrate;
forming a first organic layer covering the lower electrode, and a second organic layer spaced apart from the first organic layer and located on the upper portion;
forming a first upper electrode located on the first organic layer and in contact with the lower portion, and a second upper electrode spaced apart from the first upper electrode and located on the second organic layer;
forming a first transparent layer located on the first upper electrode, and a second transparent layer spaced apart from the first transparent layer and located on the second upper electrode;
forming a first inorganic layer located on the first transparent layer, and a second inorganic layer spaced apart from the first inorganic layer and located on the second transparent layer;
forming a sealing layer located on the first inorganic layer and the second inorganic layer and covering the partition;
forming a resist covering the sealing layer directly above the lower electrode and covering a part of the sealing layer directly above the partition;
performing dry etching using the resist as a mask to remove the sealing layer exposed from the resist; and
performing wet etching by an acidic solution using the resist as a mask to remove the second inorganic layer exposed from the resist.