US 12,446,403 B2
Display device and method of manufacturing display device
Tomohisa Aoki, Sakai (JP); Atsushi Hachiya, Sakai (JP); Yuhichi Saitoh, Sakai (JP); and Hiroaki Furukawa, Sakai (JP)
Assigned to SHARP KABUSHIKI KAISHA, Sakai (JP)
Appl. No. 17/927,000
Filed by SHARP KABUSHIKI KAISHA, Osaka (JP)
PCT Filed May 25, 2020, PCT No. PCT/JP2020/020497
§ 371(c)(1), (2) Date Nov. 22, 2022,
PCT Pub. No. WO2021/240584, PCT Pub. Date Dec. 2, 2021.
Prior Publication US 2023/0209893 A1, Jun. 29, 2023
Int. Cl. H01L 29/08 (2006.01); H10D 30/67 (2025.01); H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 59/131 (2023.01)
CPC H10K 59/1213 (2023.02) [H10D 30/6745 (2025.01); H10D 30/6755 (2025.01); H10K 59/1201 (2023.02); H10K 59/1216 (2023.02); H10K 59/131 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A display device comprising:
a pixel circuit including:
at least one transistor with a first structure comprising a crystalline silicon semiconductor film and a first gate electrode;
a transistor with a second structure including an oxide semiconductor film and a second gate electrode, and
a capacitive element;
a light emitting element;
a first interlayer insulation film covering the first gate electrode;
a second interlayer insulation film covering the second gate electrode;
a first gate insulation film between the crystalline silicon semiconductor film and the first gate electrode; and
a second gate insulation film between the oxide semiconductor film and the second gate electrode,
wherein;
the at least one transistor with the first structure includes a drive transistor,
the capacitive element includes:
a first capacitor electrode electrically connected to the first gate electrode of the drive transistor,
a second capacitor electrode positioned opposite the first capacitor electrode, and
a dielectric film between the first capacitor electrode and the second capacitor electrode,
the dielectric film is disposed in a different layer than are the first interlayer insulation film and the second interlayer insulation film, and
the dielectric film is made of a same material and in a same layer as the second gate insulation film.