US 12,446,394 B2
Light-emitting device and display panel
Zhengshen Hua, Hubei (CN)
Assigned to WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Hubei (CN)
Appl. No. 17/622,855
Filed by WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Hubei (CN)
PCT Filed Dec. 21, 2021, PCT No. PCT/CN2021/139858
§ 371(c)(1), (2) Date Dec. 26, 2021,
PCT Pub. No. WO2023/108702, PCT Pub. Date Jun. 22, 2023.
Claims priority of application No. 202111526760.2 (CN), filed on Dec. 14, 2021.
Prior Publication US 2024/0040811 A1, Feb. 1, 2024
Int. Cl. H10K 50/11 (2023.01); H10K 101/00 (2023.01); H10K 101/30 (2023.01)
CPC H10K 50/11 (2023.02) [H10K 2101/30 (2023.02); H10K 2101/90 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A light-emitting device, comprising:
a first electrode;
a second electrode arranged on a side of the first electrode;
a first light-emitting material layer; and
a second light-emitting material layer provided in lamination with the first light-emitting material layer and located between the first electrode and the second electrode;
wherein host materials of the first light-emitting material layer and the second light-emitting material layer comprise a N-type material and a P-type material, a LUMO energy level of the N-type material ranges from −2.05 eV to −3.32 eV, a HOMO energy level of the P-type material ranges from −5.46 eV to −6.54 eV, and a difference between the LUMO energy level of the N-type material and the HOMO energy level of the P-type material is greater than or equal to 2.6 Ev; and a mixture of the N-type material and the P-type material form an exciplex under light excitation or electric field excitation;
wherein the first light-emitting material layer comprises a first host material layer and a third host material layer, the first host material layer comprises a first N-type material and a first P-type material, the first host material layer and the third host material layer are stacked, and a difference of LUMO energy levels between the first host material layer and the third host material layer ranges from 0.2 eV to 0.4 eV;
the second light-emitting material layer comprises a second host material layer, and the second host material layer comprises a second N-type material and a second P-type material.