US 12,446,393 B2
Light-emitting diode comprising perovskite light-emitting layer having layered structure, and method of producing same
Tae-Woo Lee, Seoul (KR); and Young-Hoon Kim, Seoul (KR)
Assigned to SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, (KR)
Appl. No. 17/437,414
Filed by SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul (KR)
PCT Filed Dec. 31, 2019, PCT No. PCT/KR2019/018760
§ 371(c)(1), (2) Date May 9, 2022,
PCT Pub. No. WO2020/184825, PCT Pub. Date Sep. 17, 2020.
Claims priority of application No. 10-2019-0027114 (KR), filed on Mar. 8, 2019.
Prior Publication US 2022/0393128 A1, Dec. 8, 2022
Int. Cl. H10K 50/11 (2023.01); H10K 71/00 (2023.01); H10K 85/50 (2023.01); H10K 71/40 (2023.01); H10K 85/10 (2023.01); H10K 85/30 (2023.01); H10K 85/60 (2023.01); H10K 101/40 (2023.01); H10K 102/00 (2023.01)
CPC H10K 50/11 (2023.02) [H10K 71/00 (2023.02); H10K 85/50 (2023.02); H10K 71/441 (2023.02); H10K 85/111 (2023.02); H10K 85/1135 (2023.02); H10K 85/30 (2023.02); H10K 85/657 (2023.02); H10K 85/6572 (2023.02); H10K 2101/40 (2023.02); H10K 2102/351 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A light-emitting device comprising:
an anode;
a cathode;
stacked light-emitting layers disposed between the anode and the cathode; and
a hole injection layer disposed between the anode and the stacked light-emitting layers, or an electron transport layer disposed between the stacked light-emitting layers and the cathode,
wherein the stacked light-emitting layers comprise alternately disposed light-emitting material layers having different band gaps, wherein a first light-emitting material layer is a perovskite layer, and a second light-emitting material layer is either an organic light-emitting layer or a perovskite light-emitting layer, and
wherein a valence band maximum (VBM) energy level of the stacked light-emitting layers is lower than a work function of the anode and lower than a highest occupied molecular orbital (HOMO) energy level of the hole injection layer.