US 12,446,388 B2
Photodetector element and image sensor
Masahiro Takata, Shizuoka (JP); and Masashi Ono, Shizuoka (JP)
Assigned to FUJIFILM Corporation, Tokyo (JP)
Filed by FUJIFILM Corporation, Tokyo (JP)
Filed on Aug. 8, 2022, as Appl. No. 17/882,621.
Application 17/882,621 is a continuation of application No. PCT/JP2021/004475, filed on Feb. 8, 2021.
Claims priority of application No. 2020-022575 (JP), filed on Feb. 13, 2020.
Prior Publication US 2022/0384753 A1, Dec. 1, 2022
Int. Cl. H10K 30/35 (2023.01); H10K 39/32 (2023.01)
CPC H10K 30/35 (2023.02) [H10K 39/32 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A photodetector element comprising:
a photoelectric conversion layer containing an aggregate of semiconductor quantum dots QD1 that contain a metal atom and containing a ligand L1 that is coordinated to the semiconductor quantum dot QD1; and
a hole transport layer containing an aggregate of semiconductor quantum dots QD2 that contains a metal atom and containing a ligand L2 that is coordinated to the semiconductor quantum dot QD2, the hole transport layer being arranged on the photoelectric conversion layer,
wherein a band gap Eg2 of the semiconductor quantum dot QD2 is larger than a band gap Eg1 of the semiconductor quantum dot QD1,
a difference between the band gap Eg2 of the semiconductor quantum dot QD2 and the band gap Eg1 of the semiconductor quantum dot QD1 is between 0.10 eV and 1.0 eV, and
the band gap Eg1 of the semiconductor quantum dot QD1 is between 0.5 eV and 2.0 eV.