US 12,446,385 B2
Monolithic RGB microLED array
Peng Feng, Sheffield (GB); Jack Haggar, Sheffield (GB); Kean Boon Lee, Sheffield (GB); Nicolas Poyiatzis, Sheffield (GB); Ye Tian, Sheffield (GB); and Xiang Yu, Sheffield (GB)
Assigned to Snap Inc., Santa Monica, CA (US)
Filed by Snap Inc., Santa Monica, CA (US)
Filed on Oct. 23, 2024, as Appl. No. 18/924,840.
Claims priority of provisional application 63/596,174, filed on Nov. 3, 2023.
Prior Publication US 2025/0151495 A1, May 8, 2025
Int. Cl. H10H 29/10 (2025.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01); H10H 20/832 (2025.01); H10H 20/833 (2025.01)
CPC H10H 29/10 (2025.01) [H10H 20/0137 (2025.01); H10H 20/812 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01); H10H 20/833 (2025.01); H10H 20/835 (2025.01); H10H 20/032 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A method of fabricating a light emitting diode (LED) pixel array from a semiconductor wafer template comprising a successively stacked lower n-type gallium nitride (n-GaN) layer, lower multiple quantum well (MQW) layer, lower p-type gallium nitride (p-GaN) layer, upper n-GaN layer, and dielectric layer, the method comprising:
forming a plurality of apertures through the dielectric layer and extending to the upper n-GaN layer; and
forming a plurality of mesas by forming, within each aperture:
a mesa n-GaN layer;
a mesa MQW layer above each mesa n-GaN layer; and
a mesa p-GaN layer above each mesa MQW layer, such that:
the mesa n-GaN layer, mesa MQW layer, and mesa p-GaN layer of each mesa form a respective mesa LED; and
the lower n-GaN layer, lower MQW layer, and lower p-GaN layer form a lower LED.