US 12,446,382 B2
Optoelectronic semiconductor component and production method
Alexander Pfeuffer, Regensburg (DE); Korbinian Perzlmaier, Regensburg (DE); and Christoph Klemp, Regensburg (DE)
Assigned to ams-OSRAM International GmbH, Regensburg (DE)
Appl. No. 18/245,355
Filed by ams-OSRAM International GmbH, Regensburg (DE)
PCT Filed Sep. 8, 2021, PCT No. PCT/EP2021/074706
§ 371(c)(1), (2) Date Mar. 15, 2023,
PCT Pub. No. WO2022/058217, PCT Pub. Date Mar. 24, 2022.
Claims priority of application No. 10 2020 124 258.1 (DE), filed on Sep. 17, 2020.
Prior Publication US 2024/0030397 A1, Jan. 25, 2024
Int. Cl. H10H 20/857 (2025.01); H10H 20/01 (2025.01); H10H 20/84 (2025.01); H10H 20/819 (2025.01)
CPC H10H 20/857 (2025.01) [H10H 20/018 (2025.01); H10H 20/84 (2025.01); H10H 20/819 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An optoelectronic semiconductor component comprising:
a layer stack comprising:
a first semiconductor region of a first conductivity type,
a second semiconductor region of a second conductivity type,
an active zone arranged between the first and second semiconductor regions,
at least one side surface laterally delimiting the layer stack,
a first main surface and a second main surface opposite the first main surface, the first and second main surfaces each being arranged transverse to the at least one side surface;
a first contact means arranged at the first main surface and provided for electrically contacting the first semiconductor region;
a second contact means arranged at the second main surface and provided for electrically contacting the second semiconductor region, the second contact means being radiation-transmissive;
an electrically conductive edge layer arranged on the layer stack and extending from the second contact means over the side surface as far as the first main surface and having an end portion arranged at the second main surface, the end portion having a lateral extent corresponding to a thickness of the electrically conductive edge layer; and
a first dielectric layer arranged between the edge layer and the layer stack, the second main surface not being covered by the first dielectric layer;
wherein the optoelectronic semiconductor component is free of vias.