| CPC H10H 20/841 (2025.01) [H10H 20/821 (2025.01); H10H 20/831 (2025.01)] | 9 Claims |
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1. A micro light emitting diode structure, comprising:
an epitaxial structure, comprising a first type semiconductor layer, a light emitting layer and a second type semiconductor layer, wherein the light emitting layer is located between the first type semiconductor layer and the second type semiconductor layer, the first type semiconductor layer, the light emitting layer and a first portion of the second type semiconductor layer form a mesa, the mesa has a top surface and a first side surface, and a second portion of the second type semiconductor layer is recessed relative to the mesa to form a mesa surface, the second portion has a second side surface, and the mesa surface is located between the first side surface and the second side surface;
a first insulating layer, covering from the top surface of the mesa to the mesa surface along the first side surface, and exposing the second side surface; and
a second insulating layer, directly covering the second side surface, wherein a thickness ratio of the first insulating layer to the second insulating layer is between 10 and 50,
wherein a compactness of the second insulating layer is higher than a compactness of the first insulating layer, the second portion of the second type semiconductor layer further has a bottom surface opposite to the mesa surface, the second side surface connects the mesa surface and the bottom surface, and the second insulating layer extends and distributes from the second side surface and directly covers the bottom surface.
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