US 12,446,370 B2
Active / passive control of micro LED performance through sidewall gating
Yuewei Zhang, Santa Barbara, CA (US); Fang Ou, San Jose, CA (US); Lei Zhang, Albuquerque, NM (US); Lina He, San Jose, CA (US); Paul S. Drzaic, Morgan Hill, CA (US); and Xiaobin Xin, Sunnyvale, CA (US)
Assigned to Apple Inc., Cupertino, CA (US)
Filed by Apple Inc., Cupertino, CA (US)
Filed on Jan. 14, 2022, as Appl. No. 17/648,101.
Claims priority of provisional application 63/155,011, filed on Mar. 1, 2021.
Prior Publication US 2022/0278255 A1, Sep. 1, 2022
Int. Cl. H10H 20/831 (2025.01); G09G 3/32 (2016.01); H01L 25/075 (2006.01); H10H 20/857 (2025.01)
CPC H10H 20/8314 (2025.01) [G09G 3/32 (2013.01); H10H 20/857 (2025.01); H01L 25/0753 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A display structure comprising:
a display substrate including a driver contact pad;
a micro light emitting diode (LED) including a p-n diode comprising a top electrode side, a bottom electrode side connected with the driver contact pad, and an active layer therebetween;
a metal sidewall gate electrode spanning a sidewall of the p-n diode including the active layer of the p-n diode to deplete a minority carrier concentration from the sidewall;
a dielectric layer spanning along the p-n diode sidewall between the p-n diode and the sidewall gate electrode; and
a top electrically conductive layer over and in electrical contact with the top electrode side, wherein the top electrically conductive layer comprises a transparent conductive oxide or transparent conductive polymer and spans entirely across the top electrode side of the p-n diode;
wherein the top electrically conductive layer is over and in electrical contact with the sidewall gate electrode such that a potential applied to the top electrically conductive layer is applied to the sidewall gate electrode.