US 12,446,364 B2
Nanorod LED, display apparatus including the same, and method of manufacturing the nanorod LED
Younghwan Park, Seongnam-si (KR); Joosung Kim, Seongnam-si (KR); Dongchul Shin, Suwon-si (KR); and Junhee Choi, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 17, 2022, as Appl. No. 17/967,318.
Claims priority of application No. 10-2022-0011026 (KR), filed on Jan. 25, 2022.
Prior Publication US 2023/0238484 A1, Jul. 27, 2023
Int. Cl. H10H 20/819 (2025.01); B82Y 40/00 (2011.01); H10H 20/01 (2025.01); H10H 20/813 (2025.01); H10H 20/816 (2025.01); H10H 20/818 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01); H10H 20/831 (2025.01); H10H 20/851 (2025.01); H10H 29/14 (2025.01)
CPC H10H 20/819 (2025.01) [H10H 20/0137 (2025.01); H10H 20/8252 (2025.01); H10H 20/8312 (2025.01); H10H 29/142 (2025.01)] 30 Claims
OG exemplary drawing
 
1. A nanorod light emitting diode (LED) comprising:
a first-type semiconductor layer including a body and a pyramidal structure continuously provided from the body;
a nitride light emitting layer provided on the pyramidal structure; and
a second-type semiconductor layer provided on the nitride light emitting layer,
wherein the first-type semiconductor layer, the nitride light emitting layer, and the second-type semiconductor layer are stacked to form a nanorod,
wherein the nanorod has a diameter in a direction, in which, the first-type semiconductor layer, the nitride light emitting layer, and the second-type semiconductor layer are stacked, and
wherein a diameter of the first-type semiconductor layer and a diameter of the second-type semiconductor layer are same as the diameter of the nanorod.