US 12,446,363 B2
Light-emitting structure and light-emitting device including the same
Zheng Wu, Xiamen (CN); Chia-En Lee, Xiamen (CN); and Chen-Ke Hsu, Xiamen (CN)
Assigned to HUBEI SAN'AN OPTOELECTRONICS CO., LTD., Ezhou (CN)
Filed by XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen (CN)
Filed on Sep. 7, 2022, as Appl. No. 17/939,300.
Application 17/939,300 is a continuation in part of application No. 16/895,119, filed on Jun. 8, 2020, granted, now 11,456,400.
Application 16/895,119 is a continuation in part of application No. PCT/CN2018/085128, filed on Apr. 28, 2018.
Claims priority of application No. 201711306978.0 (CN), filed on Dec. 11, 2017.
Prior Publication US 2023/0006097 A1, Jan. 5, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10H 20/819 (2025.01); H01L 21/683 (2006.01)
CPC H10H 20/819 (2025.01) [H01L 21/6835 (2013.01); H01L 2221/68313 (2013.01); H01L 2221/68354 (2013.01); H01L 2221/68363 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A light-emitting structure, comprising:
a light-emitting diode including:
an epitaxial laminate having an upper surface and a recess extending inwardly from said upper surface, said epitaxial laminate including
a first type semiconductor layer,
a second type semiconductor layer, and
a light-emitting layer interposed between said first type semiconductor layer and said second type semiconductor layer,
a first electrode electrically connected to said first type semiconductor layer, and
a second electrode electrically connected to said second type semiconductor layer; and
a connecting unit connected to said epitaxial laminate,
wherein said epitaxial laminate further has a lower surface opposite to said upper surface, said lower surface having a first surface portion located at said first type semiconductor layer, a second surface portion located at said second type semiconductor layer, and a shoulder surface portion interconnecting said first surface portion and said second surface portion, said recess being misaligned with said first surface portion in a longitudinal direction transverse to said upper surface of said epitaxial laminate.