US 12,446,362 B2
Nanorod light emitting device, method of manufacturing the same, and display apparatus including the same
Junhee Choi, Seongnam-si (KR); Joohun Han, Hwaseong-si (KR); Nakhyun Kim, Yongin-si (KR); and Joosung Kim, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 18, 2021, as Appl. No. 17/529,636.
Claims priority of application No. 10-2021-0081800 (KR), filed on Jun. 23, 2021.
Prior Publication US 2022/0416122 A1, Dec. 29, 2022
Int. Cl. H10H 20/819 (2025.01); H10H 20/817 (2025.01); H10H 20/833 (2025.01)
CPC H10H 20/819 (2025.01) [H10H 20/817 (2025.01); H10H 20/833 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A nanorod light emitting device comprising:
a semiconductor light emitting nanorod;
a passivation film surrounding a sidewall of the semiconductor light emitting nanorod and having insulating properties,
wherein the passivation film comprises an insulating crystalline material having a substantially same crystal structure as a crystal structure of the semiconductor light emitting nanorod,
an amorphous insulating layer directly in contact with a sidewall of the passivation film; and
further comprising a protective film disposed between the semiconductor light emitting nanorod and the passivation film to directly surround the sidewall of the semiconductor light emitting nanorod,
wherein the protective film comprises an insulating crystalline material having the substantially same crystal structure as the crystal structure of the semiconductor light emitting nanorod,
wherein an energy bandgap of the protective film is greater than an energy bandgap of the semiconductor light emitting nanorod, and
wherein an energy bandgap of the passivation film is greater than or equal to the energy bandgap of the protective film.