US 12,446,361 B2
Light emitting element
Makoto Abe, Tokushima (JP)
Assigned to NICHIA CORPORATION, Anan (JP)
Filed by NICHIA CORPORATION, Anan (JP)
Filed on Nov. 8, 2022, as Appl. No. 18/053,622.
Claims priority of application No. 2021-189304 (JP), filed on Nov. 22, 2021.
Prior Publication US 2023/0163240 A1, May 25, 2023
Int. Cl. H10H 20/816 (2025.01); H10H 20/812 (2025.01); H10H 20/813 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/8162 (2025.01) [H10H 20/812 (2025.01); H10H 20/8252 (2025.01); H10H 20/813 (2025.01)] 14 Claims
OG exemplary drawing
 
1. A light emitting element comprising:
successively from a lower side to an upper side:
a first light emitting part having a first active layer;
a tunnel junction part; and
a second light emitting part having a second active layer; wherein:
the first active layer comprises:
a plurality of first well layers, and
a first barrier layer positioned between two adjacent first well layers among the first well layers and having a wider band gap than the band gaps of the first well layers;
the second active layer comprises:
a plurality of second well layers, and
a second barrier layer positioned between two adjacent second well layers among the second well layers and having a wider band gap than the band gaps of the second well layers;
the second barrier layer is a nitride semiconductor layer containing an n-type impurity and gallium, and has a higher n-type impurity concentration than an n-type impurity concentration of the first barrier layer;
the second barrier layer comprises, successively from a first light emitting part side, a first layer and a second layer;
an n-type impurity concentration peak in the second barrier layer is located in the first layer; and
a thickness of the first layer is 10% to 50% of a thickness of the second barrier layer.