US 12,446,359 B2
Epitaxial structure and micro light emitting device
Shen-Jie Wang, MiaoLi County (TW); and Kuang-Yuan Hsu, MiaoLi County (TW)
Assigned to PlayNitride Display Co., Ltd., MiaoLi County (TW)
Filed by PlayNitride Display Co., Ltd., MiaoLi County (TW)
Filed on Apr. 29, 2022, as Appl. No. 17/732,523.
Claims priority of application No. 110128528 (TW), filed on Aug. 3, 2021.
Prior Publication US 2023/0043942 A1, Feb. 9, 2023
Int. Cl. H10H 20/812 (2025.01); H10H 20/81 (2025.01); H10H 20/815 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/812 (2025.01) [H10H 20/821 (2025.01); H10H 20/8215 (2025.01); H10H 20/815 (2025.01); H10H 20/8252 (2025.01)] 18 Claims
OG exemplary drawing
 
1. An epitaxial structure, comprising:
a quantum well structure having an upper surface and a lower surface opposite to each other and comprising at least one quantum well layer and at least one quantum barrier layer stacked alternately, wherein the at least one quantum well layer comprises at least one patterned layer, and the at least one patterned layer comprises a plurality of geometric patterns;
a first type semiconductor layer disposed on the lower surface of the quantum well structure;
a second type semiconductor layer disposed on the upper surface of the quantum well structure; and
at least one V-shaped defect in the quantum well structure, wherein one of the at least one V-shaped defect is formed at an interface of the second type semiconductor layer and the at least one quantum barrier layer and passes through one of the at least one patterned layer, and another one of the at least one V-shaped defect penetrates into a top surface of, the first type semiconductor layer.