US 12,446,357 B2
Method for manufacturing nitride semiconductor light-emitting element
Miho Matsuzaki, Hakusan (JP); Yusuke Matsukura, Hakusan (JP); and Cyril Pernot, Hakusan (JP)
Assigned to Nikkiso Co., Ltd., Tokyo (JP)
Filed by NIKKISO CO., LTD., Tokyo (JP)
Filed on Jan. 23, 2023, as Appl. No. 18/157,868.
Claims priority of application No. 2022-009154 (JP), filed on Jan. 25, 2022.
Prior Publication US 2023/0238475 A1, Jul. 27, 2023
Int. Cl. H10H 20/01 (2025.01); H10H 20/819 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/0137 (2025.01) [H10H 20/819 (2025.01); H10H 20/8252 (2025.01)] 12 Claims
OG exemplary drawing
 
1. A method for manufacturing a nitride semiconductor light-emitting element, comprising:
growing an n-type semiconductor layer on a substrate;
growing an active layer on the n-type semiconductor layer;
growing a p-type cladding layer with an average Al composition ratio in a thickness direction of not less than 70% on the active layer; and
growing a p-type contact layer with an Al composition ratio of not more than 10% on the p-type cladding layer,
wherein where a ratio Fp/FIII of a flow rate Fp of a p-type impurity source gas [μmol/min] to a flow rate FIII of a group III element source gas [μmol/min] is defined as a p/III ratio and a ratio FV/FIII of a flow rate FV of a group V element source gas [μmol/min] to the flow rate FIII is defined as a V/III ratio in each of in the growing the p-type cladding layer and the growing the p-type contact layer,
the p-type cladding layer is grown in the growing the p-type cladding layer at a growth rate of not more than 2.5 nm/min, the p/III ratio of not less than 0.0002 and not more than 0.0400 and the V/III ratio of not more than 7000, and
the p-type contact layer is grown in the growing the p-type contact layer at a growth rate of not more than 3.3 nm/min, the p/III ratio of not less than 0.0200 and the V/III ratio of not less than 10000.