US 12,446,353 B2
Hybrid heterojunction solar cell, cell component and preparation method
Wei Liu, Changzhou (CN); Yunyun Hu, Changzhou (CN); Daming Chen, Changzhou (CN); and Kuiyi Wu, Changzhou (CN)
Assigned to Trina Solar Co., Ltd, Changzhou (CN)
Filed by Trina Solar Co., Ltd, Changzhou (CN)
Filed on Sep. 30, 2024, as Appl. No. 18/901,554.
Claims priority of application No. 202311645077.X (CN), filed on Dec. 4, 2023.
Prior Publication US 2025/0185379 A1, Jun. 5, 2025
Int. Cl. H10F 71/00 (2025.01); H10F 10/164 (2025.01); H10F 71/10 (2025.01); H10F 77/164 (2025.01); H10F 77/20 (2025.01); H10F 77/30 (2025.01); H10F 77/70 (2025.01)
CPC H10F 77/211 (2025.01) [H10F 10/164 (2025.01); H10F 71/103 (2025.01); H10F 71/121 (2025.01); H10F 71/1221 (2025.01); H10F 71/1224 (2025.01); H10F 71/128 (2025.01); H10F 71/129 (2025.01); H10F 71/134 (2025.01); H10F 71/138 (2025.01); H10F 77/1642 (2025.01); H10F 77/244 (2025.01); H10F 77/315 (2025.01); H10F 77/707 (2025.01)] 6 Claims
OG exemplary drawing
 
1. A method of preparing a hybrid heterojunction solar cell, comprising:
preparing a semiconductor substrate, the semiconductor substrate has a substrate front surface and a substrate back surface opposite to each other, wherein the substrate front surface is close to a light-facing side of the cell and the substrate back surface is close to a backlight side of the cell;
preparing at least two composite layers and a positive metal electrode on the substrate front surface sequentially, each composite layer includes a multi-layer structure of a tunneling layer and a doped polysilicon layer sequentially arranged in a direction gradually away from the substrate front surface; and
preparing an intrinsic amorphous silicon layer, a backside doped layer, a transparent conductive layer, and a back metal electrode on the substrate back surface sequentially, wherein the backside doped layer includes a single layer or a multi-layer structure composed of a doped amorphous silicon, nanocrystalline silicon and/or microcrystalline silicon,
wherein preparing the at least two composite layers further includes:
sequentially forming a first tunneling layer, a first doped polysilicon layer, a second tunneling layer and a second doped polysilicon layer on the substrate front surface;
laser scanning part of the second doped polysilicon layer to grow a silicon oxide film to obtain a first semi-finished cell, the first semi-finished cell has a plurality of spaced and adjacently arranged contact areas and non-contact areas on a side of the substrate front surface, wherein, the contact areas are scanned by the laser, and the non-contact areas are not scanned by the laser;
etching the first semi-finished cell by using an alkaline solution to remove the second doped polysilicon layer of the non-contact areas;
removing the silicon oxide film and the second tunneling layer of the non-contact areas, so that each of the contact areas includes two composite layers, and each of the non-contact areas only includes one composite layer.