US 12,446,348 B2
Solid-state imaging element, manufacturing method, and electronic device
Satoru Wakiyama, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 16/347,432
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Nov. 1, 2017, PCT No. PCT/JP2017/039471
§ 371(c)(1), (2) Date May 3, 2019,
PCT Pub. No. WO2018/088284, PCT Pub. Date May 17, 2018.
Claims priority of application No. 2016-221187 (JP), filed on Nov. 14, 2016.
Prior Publication US 2019/0333954 A1, Oct. 31, 2019
Int. Cl. H10F 39/00 (2025.01); A61B 1/04 (2006.01)
CPC H10F 39/809 (2025.01) [A61B 1/04 (2013.01); H10F 39/016 (2025.01); H10F 39/024 (2025.01); H10F 39/026 (2025.01); H10F 39/802 (2025.01); H10F 39/8063 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A solid-state image sensor comprising:
a first semiconductor element including a pixel including a photoelectric conversion element;
a second semiconductor element including a logic circuit or a memory circuit and stacked with and bonded to the first semiconductor element;
a through electrode electrically connecting the first semiconductor element and the second semiconductor element;
a through-silicon via (TSV) formed from a back surface side of the second semiconductor element to a pad formed in the first semiconductor element;
an electrode formed on the TSV; and
a wafer support system material comprising a glass substrate bonded to an on-chip lens by a layer of resin after formation of the lens on a light receiving surface of the first semiconductor element, wherein:
the resin separates the wafer support system material from the lens,
the light receiving surface of the first semiconductor element faces a direction opposite to a direction faced by the back surface side of the second semiconductor element,
the wafer support system material and the resin are configured to be removed from the light receiving surface after formation of the electrode, and
the back surface side of the second semiconductor element is wider than the light receiving surface of the first semiconductor element.