| CPC H10F 39/807 (2025.01) [H10F 39/18 (2025.01); H10F 39/802 (2025.01); H10F 39/8037 (2025.01); H10F 39/8053 (2025.01); H10F 39/811 (2025.01)] | 19 Claims |
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1. An image sensor comprising:
a plurality of pixels arranged parallel to an upper surface of a substrate; and
a pixel isolation film disposed between the plurality of pixels,
wherein each of the plurality of pixels includes at least one photodiode, a floating diffusion region doped with impurities of a first conductivity type, a transfer gate structure that is disposed adjacent to the floating diffusion region, and at least one transistor,
wherein the transfer gate structure includes a transfer gate electrode layer, a transfer gate insulating layer disposed between the transfer gate electrode layer and the substrate, and a transfer gate spacer adjacent to the transfer gate insulating layer in a first direction parallel to the upper surface of the substrate, and at least a portion of the transfer gate spacer is disposed between the floating diffusion region and the transfer gate electrode layer,
wherein, in each of the plurality of pixels, a floating diffusion contact connected to the floating diffusion region is disposed more adjacent in the first direction to the pixel isolation film than to the transfer gate structure, and
wherein the transfer gate spacer includes a first spacer region extending along a side surface of the transfer gate insulating layer, a second spacer region extending along a side surface of the floating diffusion region, and a valley region disposed between the first spacer region and the second spacer region.
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