US 12,446,344 B2
Solid-state image sensor
Koya Tsuchimoto, Nagasaki (JP); Shin Kitano, Kanagawa (JP); Yusuke Murakawa, Nagasaki (JP); Makoto Nakamura, Nagasaki (JP); Takuya Hanada, Nagasaki (JP); and Yuki Noda, Nagasaki (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/794,865
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jan. 18, 2021, PCT No. PCT/JP2021/001408
§ 371(c)(1), (2) Date Jul. 22, 2022,
PCT Pub. No. WO2021/153295, PCT Pub. Date Aug. 5, 2021.
Claims priority of application No. 2020-015827 (JP), filed on Jan. 31, 2020.
Prior Publication US 2023/0058009 A1, Feb. 23, 2023
Int. Cl. H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/8057 (2025.01) [H10F 39/18 (2025.01); H10F 39/809 (2025.01); H10F 39/811 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A solid-state image sensor, comprising:
a photodiode configured to photoelectrically convert incident light to generate a photocurrent;
a conversion circuit configured to convert the photocurrent into a voltage signal;
a luminance change detection circuit configured to detect a change in luminance of the incident light on a basis of the voltage signal; and
a light-shielding unit configured to shield incidence of light on an impurity diffusion region included in a circuit that inputs the voltage signal to the luminance change detection circuit.