| CPC H10F 39/8057 (2025.01) [H10F 39/182 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01)] | 14 Claims |

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1. A solid-state imaging device, comprising:
a pixel unit that includes:
a plurality of unit pixels in a two-dimensional array, wherein each unit pixel of the plurality of unit pixels includes:
a plurality of photoelectric conversion units on a substrate; and
a plurality of microlenses, wherein
the plurality of photoelectric conversion units is configured to generate signal charges corresponding to amount of an incident light incident on the plurality of photoelectric conversion units,
one microlens, from the plurality of microlenses, is for one photoelectric conversion unit group among a plurality of photoelectric conversion unit groups,
each photoelectric conversion unit group of the plurality of photoelectric conversion unit groups consists of at least two adjacent photoelectric conversion units of the plurality of photoelectric conversion units,
each of the at least two adjacent photoelectric conversion units is inter-insulated by an impurity layer, and the plurality of microlenses is configured to guide the incident light to each of the plurality of the plurality of photoelectric conversion unit groups; and
a plurality of light-absorbing layers between the plurality of microlenses and the substrate, wherein
the plurality of light-absorbing layers is configured to absorb a portion of the incident light guided to the plurality of photoelectric conversion unit groups by the plurality of microlenses, and
each of the plurality of light-absorbing layers becomes longer in a direction parallel to a line that passes through a corresponding unit pixel of the plurality of unit pixels and a central portion of the pixel unit, as a distance between the corresponding unit pixel and the central portion of the pixel unit increases.
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