US 12,446,340 B2
Sensor with upconversion layer
Namwoong Paik, Lawrenceville, NJ (US); and Peter Alan Levine, West Windsor, NJ (US)
Assigned to SRI International, Menlo Park, CA (US)
Filed by SRI International, Menlo Park, CA (US)
Filed on Aug. 5, 2022, as Appl. No. 17/817,841.
Claims priority of provisional application 63/229,965, filed on Aug. 5, 2021.
Prior Publication US 2023/0041955 A1, Feb. 9, 2023
Int. Cl. H01L 27/146 (2006.01); G02B 5/20 (2006.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/805 (2025.01) [G02B 5/208 (2013.01); H10F 39/024 (2025.01); H10F 39/1847 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A sensor comprising:
an upconversion layer comprising a plurality of crystals configured to convert electromagnetic radiation comprising a first range of wavelengths greater than 1100 nm to electromagnetic radiation comprising a second range of wavelengths less than or equal to 1100 nm; and
a photo-sensitive silicon substrate configured to detect the electromagnetic radiation comprising the second range of wavelengths,
wherein the plurality of crystals are configured to scatter the electromagnetic radiation comprising the second range of wavelengths incident onto the photo-sensitive silicon substrate to increase an incidence angle, relative to a surface normal of the photo-sensitive silicon substrate, of at least a portion of the electromagnetic radiation comprising the second range of wavelengths.