US 12,446,336 B2
CMOS imaging sensor structure and manufacturing method therefor
Xiaoxu Kang, Shanghai (CN); and Ming Li, Shanghai (CN)
Assigned to SHANGHAI IC R&D CENTER CO., LTD., Shanghai (CN); and Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co. Ltd, Shanghai (CN)
Appl. No. 17/432,930
Filed by SHANGHAI IC R&D CENTER CO., LTD., Shanghai (CN); and Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd, Shanghai (CN)
PCT Filed Oct. 14, 2019, PCT No. PCT/CN2019/110938
§ 371(c)(1), (2) Date Aug. 22, 2021,
PCT Pub. No. WO2020/168728, PCT Pub. Date Aug. 27, 2020.
Claims priority of application No. 201910133346.1 (CN), filed on Feb. 22, 2019; and application No. 201910183135.9 (CN), filed on Mar. 12, 2019.
Prior Publication US 2024/0413175 A1, Dec. 12, 2024
Int. Cl. H10F 39/00 (2025.01)
CPC H10F 39/802 (2025.01) [H10F 39/026 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A CMOS imaging sensor structure, comprising: a pixel unit of the CMOS imaging sensor set on a semiconductor substrate, the pixel unit comprises a circuit device region and a first photosensitive region, the circuit device region is set on the frontside of the semiconductor substrate, the first photosensitive region is set correspondingly in the semiconductor substrate below the circuit device region, the circuit device region is isolated from the first photosensitive region by an isolation region, and the circuit device region is electrically connected with the first photosensitive region through a conductive trench;
wherein, the semiconductor substrate is an SOI substrate, and the SOI substrate comprises a silicon substrate layer, a buried oxygen layer, and an epitaxial silicon layer sequentially, and the CMOS imaging sensor comprises:
the circuit device region set on the epitaxial silicon layer and the first photosensitive region set on the silicon substrate layer; the circuit device region is isolated from the first photosensitive region by the buried oxygen layer, and the circuit device region is electrically connected with the first photosensitive region through a conductive trench passing through the buried oxide layer;
each of pixels of the CMOS imaging sensor is set with the circuit device region and the first photosensitive region, the circuit device region and the first photosensitive region are set on the epitaxial silicon layer and the silicon substrate layer respectively, upper and lower positions of the circuit device region and the first photosensitive region are corresponding;
each of the pixels of the CMOS imaging sensor is isolated by a shallow trench isolation structure.