| CPC H10F 39/011 (2025.01) [H10F 39/199 (2025.01)] | 20 Claims |
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1. A method, comprising:
forming a dielectric layer on a substrate;
forming a trench in the dielectric layer and the substrate;
forming an epitaxial structure in the trench;
forming a barrier layer with first and second layer portions, wherein the first layer portion is formed on a sidewall portion of the trench that is not covered by the epitaxial structure;
forming a capping layer on the epitaxial structure and adjacent to the barrier layer;
selectively doping regions of the epitaxial structure and the capping layer;
forming a silicide layer on the doped regions;
forming an etch stop layer on the silicide layer; and
forming conductive plugs on the silicide layer through the etch stop layer.
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