US 12,446,332 B2
Opto-electronic device for detecting and localizing objects for LIDAR applications
Delfo Nunziato Sanfilippo, Catania (IT); and Piero Fallica, Catania (IT)
Assigned to STMICROELECTRONICS S.R.L., Agrate Brianza (IT)
Filed by STMICROELECTRONICS S.R.L., Agrate Brianza (IT)
Filed on Aug. 23, 2022, as Appl. No. 17/821,711.
Claims priority of application No. 102021000022547 (IT), filed on Aug. 30, 2021.
Prior Publication US 2023/0062980 A1, Mar. 2, 2023
Int. Cl. H10F 30/225 (2025.01); G01S 7/4863 (2020.01); H10F 71/00 (2025.01); H10F 77/14 (2025.01)
CPC H10F 30/225 (2025.01) [G01S 7/4863 (2013.01); H10F 71/121 (2025.01); H10F 77/148 (2025.01)] 16 Claims
OG exemplary drawing
 
1. An opto-electronic device, comprising:
a semiconductor layer of a first conductivity type, the semiconductor layer having a thickness in a first direction; and
at least one deep region of a second conductivity type extending into the semiconductor layer and forming a PN junction with the semiconductor layer, the deep region including a bottom portion, an intermediate portion, and a surface portion,
wherein the deep region has a depth along the first direction and a width in a second direction transverse to the first direction, the depth being greater than the width, and
wherein the semiconductor layer includes:
a first layer portion contiguous with the bottom portion of the deep region, and having a first doping ion concentration;
a second layer portion contiguous with the surface portion of the deep region, and having a second doping ion concentration; and
a third layer portion contiguous with the intermediate portion of the deep region, and having a third doping ion concentration,
wherein the third doping ion concentration is greater than each of the first and second doping ion concentrations,
wherein the deep region includes:
a central region having a fourth doping ion concentration; and
a peripheral zone surrounding the central region, the peripheral zone having a fifth doping ion concentration that is greater than the fourth doping ion concentration, the central region being spaced from the first layer portion, the second layer portion, and the third layer portion by the peripheral zone.