US 12,446,319 B2
Semiconductor device structure and methods of forming the same
Jung-Hung Chang, Changhua (TW); Zhi-Chang Lin, Hsinchu (TW); Shih-Cheng Chen, New Taipei (TW); Chien Ning Yao, Hsinchu (TW); Kuo-Cheng Chiang, Hsinchu (TW); and Chih-Hao Wang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jan. 7, 2024, as Appl. No. 18/406,155.
Application 18/406,155 is a continuation of application No. 17/459,101, filed on Aug. 27, 2021, granted, now 11,901,364.
Prior Publication US 2024/0153958 A1, May 9, 2024
Int. Cl. H01L 27/12 (2006.01); H01L 21/822 (2006.01); H01L 21/8234 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 87/00 (2025.01); H10D 88/00 (2025.01)
CPC H10D 87/00 (2025.01) [H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01); H10D 88/01 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first, second, and third pluralities of semiconductor layers over a substrate, wherein the first plurality of semiconductor layers are disposed at a first location over the substrate, the second plurality of semiconductor layers are disposed at a second location over the substrate, and the third plurality of semiconductor layers are disposed at a third location over the substrate;
forming a first source/drain epitaxial feature in contact with the first plurality of semiconductor layers;
forming a second source/drain epitaxial feature in contact with the second plurality of semiconductor layers;
forming a third source/drain epitaxial feature in contact with the third plurality of semiconductor layers;
recessing the first, second, and third source/drain epitaxial features to form first, second, and third recessed source/drain epitaxial features;
forming a mask on the first recessed source/drain epitaxial feature; and
recessing the second recessed source/drain epitaxial feature.