US 12,446,316 B2
Metal oxide and semiconductor device
Shunpei Yamazaki, Setagaya (JP); Motoki Nakashima, Atsugi (JP); and Haruyuki Baba, Isehara (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Apr. 13, 2023, as Appl. No. 18/134,117.
Application 18/134,117 is a continuation of application No. 17/198,660, filed on Mar. 11, 2021, granted, now 11,658,185.
Application 17/198,660 is a continuation of application No. 16/935,469, filed on Jul. 22, 2020, granted, now 10,950,634, issued on Mar. 16, 2021.
Application 16/935,469 is a continuation of application No. 15/637,081, filed on Jun. 29, 2017, granted, now 10,734,413, issued on Aug. 4, 2020.
Claims priority of application No. 2016-137193 (JP), filed on Jul. 11, 2016.
Prior Publication US 2023/0246034 A1, Aug. 3, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 86/60 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01)
CPC H10D 86/60 (2025.01) [H10D 30/0314 (2025.01); H10D 30/0321 (2025.01); H10D 30/6734 (2025.01); H10D 30/6755 (2025.01); H10D 30/6756 (2025.01); H10D 30/6757 (2025.01); H10D 86/423 (2025.01); G02F 1/136222 (2021.01); G02F 1/1368 (2013.01); G02F 2201/44 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a metal oxide film comprising a channel formation region, a pair of electrodes in contact with the metal oxide film, and a gate electrode,
wherein the metal oxide film comprises:
a plurality of first regions formed of a first material; and
a second region formed of a second material,
wherein the metal oxide film is separated into the plurality of first regions and the second region,
wherein the plurality of first regions and the second region are distributed in the metal oxide film,
wherein the first material and the second material each comprise In, Zn and O,
wherein the first material comprises Ga,
wherein a concentration of In in the second material is higher than a concentration of In in the first material,
wherein each of the plurality of first regions has a size of greater than or equal to 0.5 nm and less than or equal to 2 nm, and
wherein the gate electrode is provided over the channel formation region.