US 12,446,313 B2
Array substrate, method for manufacturing array substrate, and display device
Shan Li, Guangzhou (CN); Wei Wu, Guangzhou (CN); and Juncheng Xiao, Guangzhou (CN)
Assigned to Guangzhou China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangzhou (CN)
Appl. No. 17/777,035
Filed by Guangzhou China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangzhou (CN)
PCT Filed Mar. 29, 2022, PCT No. PCT/CN2022/083634
§ 371(c)(1), (2) Date May 15, 2022,
PCT Pub. No. WO2023/168768, PCT Pub. Date Sep. 14, 2023.
Claims priority of application No. 202210230045.2 (CN), filed on Mar. 10, 2022.
Prior Publication US 2025/0089361 A1, Mar. 13, 2025
Int. Cl. H10D 86/01 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01)
CPC H10D 86/60 (2025.01) [H10D 86/0221 (2025.01); H10D 86/423 (2025.01)] 16 Claims
OG exemplary drawing
 
1. An array substrate, comprising:
a substrate;
an oxide semiconductor layer;
a gate electrode, the gate electrode and the oxide semiconductor layer are arranged on a same side of the substrate, a projection of the gate electrode on the substrate at least partially overlapping a projection of the oxide semiconductor layer on the substrate, and the gate electrode and the oxide semiconductor layer are arranged in different layer levels;
wherein a material of the oxide semiconductor layer comprises at least two metal elements and at least one of aluminum zinc oxide and aluminum gallium zinc oxide, the at least two metal elements comprises a modified metal element,
the modified metal element is aluminum, and a proportion of aluminum in the at least two metal elements gradually decreases from the gate electrode toward the oxide semiconductor layer.