| CPC H10D 86/01 (2025.01) [H10D 62/116 (2025.01); H10D 62/151 (2025.01); H10D 64/018 (2025.01); H10D 64/021 (2025.01); H10D 86/201 (2025.01)] | 20 Claims |
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1. A structure comprising:
a semiconductor layer;
a gate structure on the semiconductor layer;
sidewall spacers adjacent to opposing sidewalls of the gate structure, wherein each sidewall spacer has a first section on the semiconductor layer positioned laterally adjacent to the gate structure and further having has a second section above and wider than the first section and positioned laterally adjacent the gate structure; and
source/drain regions on the semiconductor layer and positioned laterally adjacent to the sidewall spacers, respectively, wherein each source/drain region adjacent to a sidewall spacer includes: a first portion immediately adjacent to the first section of the sidewall spacer between the semiconductor layer and the second section of the sidewall spacer; and a second portion extending vertically from the first portion along and immediately adjacent to a side surface of the second section of the sidewall spacer.
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