| CPC H10D 84/853 (2025.01) [H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 84/0167 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01)] | 15 Claims |
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1. An integrated circuit semiconductor element comprising:
a substrate;
a complementary field effect transistor (FET) (cFET) formed over the substrate and having a quadruple-gate structure in which nano sheet stacked structures are sequentially stacked; and
a fin FET (FINFET) formed over the substrate and having a triple-gate structure, and spaced apart from the cFET in a first direction parallel to a surface of the substrate,
wherein the cFET comprises a first active fin formed on the substrate, the nano sheet stacked structures formed over the first active fin, a first dielectric layer surrounding the nano sheet stacked structures, and a first gate electrode formed on the first dielectric layer,
wherein the FINFET comprises a second active fin formed on the substrate, a second dielectric layer surrounding the second active fin, and a second gate electrode formed on the second dielectric layer,
wherein an upper surface of the second active fin is at a higher level than an upper surface of the first active fin in a first second direction perpendicular to the surface of the substrate, and
wherein the cFET comprises transistors of different conductivity types stacked alternately in the second direction.
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