US 12,446,300 B2
Semiconductor devices having on-chip gate resistors
Rahul R. Potera, Apex, NC (US); Prasanna Obala Bhuvanesh, Leander, TX (US); Shadi Sabri, Apex, NC (US); Roberto M. Schupbach, Fayetteville, AR (US); and Jianwen Shao, Cary, NC (US)
Assigned to Wolfspeed, Inc., Durham, NC (US)
Filed by Wolfspeed, Inc., Durham, NC (US)
Filed on Jun. 23, 2022, as Appl. No. 17/847,410.
Prior Publication US 2023/0420451 A1, Dec. 28, 2023
Int. Cl. H10D 1/47 (2025.01); H01L 23/482 (2006.01); H10D 12/01 (2025.01); H10D 30/83 (2025.01); H10D 62/832 (2025.01); H10D 84/03 (2025.01); H10D 84/80 (2025.01)
CPC H10D 84/811 (2025.01) [H01L 23/4824 (2013.01); H10D 1/47 (2025.01); H10D 12/031 (2025.01); H10D 30/831 (2025.01); H10D 62/8325 (2025.01); H10D 84/035 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a gate pad;
a gate bus; and
a gate resistor electrically interposed between the gate pad and the gate bus and comprising a wide band-gap semiconductor material region that has an insulating layer formed directly on an upper surface of the wide band-gap semiconductor material region.