| CPC H10D 84/217 (2025.01) [H10D 1/692 (2025.01)] | 16 Claims |

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1. A capacitor assembly comprising:
a substrate comprising a semiconductor material;
an oxide layer formed on a surface of the substrate;
an insulator layer formed over at least a portion of the oxide layer;
a first conductive layer formed over at least a portion of the oxide layer;
a second conductive layer formed over at least a portion of the insulator layer;
a first terminal connected with the first conductive layer;
a second terminal connected with the second conductive layer; and
a third terminal connected with the substrate;
wherein the oxide layer is connected in series between the substrate and the first conductive layer to form a first capacitor between the first terminal and the third terminal; and
wherein the insulator layer is connected in series between the substrate and the second conductive layer to form a second capacitor between the second terminal and the third terminal.
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