US 12,446,293 B2
Methods, apparatus, and manufacturing system for self-aligned patterning of a vertical transistor
Chanro Park, Clifton Park, NY (US); Ruilong Xie, Niskayuna, NY (US); and Min Gyu Sung, Latham, NY (US)
Assigned to GlobalFoundries U.S. Inc., Santa Clara, CA (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Apr. 18, 2022, as Appl. No. 17/722,653.
Application 17/722,653 is a division of application No. 15/676,005, filed on Aug. 14, 2017, granted, now 11,309,220.
Prior Publication US 2022/0238386 A1, Jul. 28, 2022
Int. Cl. H10D 84/03 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/63 (2025.01); H10D 84/01 (2025.01)
CPC H10D 84/038 (2025.01) [H10D 30/024 (2025.01); H10D 30/025 (2025.01); H10D 30/6215 (2025.01); H10D 30/63 (2025.01); H10D 84/0158 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a plurality of fin structures on a substrate, wherein the plurality of fin structures has a first end and each fin structure comprises a lower portion comprising a lower fin body and a gate structure on at least a first side and a second side of said lower fin body, wherein said lower portion has a first width;
forming at least an oxide layer on said substrate and between adjacent said fin structures;
forming a spacer on at least a first side and a second side of an upper fin body, above the lower fin body of each fin structure of the plurality of fin structures, to yield a fin structure comprising an upper portion comprising said upper fin body and said spacer, wherein said upper portion has a second width greater than said first width, and said spacers of two neighboring upper portions of adjacent fin structures are separated by a third width; and
forming an opening in said oxide layer between said adjacent fin structures, wherein said opening has said third width, and a portion of said oxide layer is laterally disposed between said gate structure and said opening.