US 12,446,283 B2
Semiconductor device and method for forming the same
Chih-Hao Wang, Hsinchu County (TW); Ching-Wei Tsai, Hsinchu (TW); and Yu-Xuan Huang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 2, 2022, as Appl. No. 17/831,087.
Prior Publication US 2023/0395696 A1, Dec. 7, 2023
Int. Cl. H10D 64/01 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H10D 64/017 (2025.01) [H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 64/021 (2025.01); H10D 84/013 (2025.01); H10D 84/0147 (2025.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first semiconductor layer over a substrate;
forming a dummy material covering a first sidewall of the first semiconductor layer;
forming source/drain epitaxy structures over the substrate and in contact with the first semiconductor layer;
forming an interfacial layer on a top surface and a second sidewall of the first semiconductor layer that are uncovered by the dummy material;
removing the dummy material to expose the first sidewall of the first semiconductor layer;
forming a second semiconductor layer on the first sidewall of the first semiconductor layer after removing the dummy material, wherein the second semiconductor layer and the source/drain epitaxy structures have different conductivity types; and
forming a gate electrode over the interfacial layer.