US 12,446,282 B2
Control system and control method for dual-gate bidirectional switch
Yusuke Kinoshita, Kyoto (JP); Masanori Nomura, Osaka (JP); and Satoshi Nakazawa, Osaka (JP)
Assigned to PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka (JP)
Appl. No. 18/001,864
Filed by Panasonic Intellectual Property Management Co., Ltd., Osaka (JP)
PCT Filed Apr. 13, 2021, PCT No. PCT/JP2021/015260
§ 371(c)(1), (2) Date Dec. 14, 2022,
PCT Pub. No. WO2022/009492, PCT Pub. Date Jan. 13, 2022.
Claims priority of application No. 2020-117403 (JP), filed on Jul. 7, 2020.
Prior Publication US 2023/0231018 A1, Jul. 20, 2023
Int. Cl. H10D 62/85 (2025.01); H10D 30/47 (2025.01)
CPC H10D 62/8503 (2025.01) [H10D 30/4755 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A control system for a dual-gate bidirectional switch of a normally-on type, the dual-gate bidirectional switch including a first gate, a first source corresponding to the first gate, a second gate, and a second source corresponding to the second gate, the control system comprising:
a first gate drive circuit connected between the first gate and the first source;
a second gate drive circuit connected between the second gate and the second source; and
a controller that controls the first gate drive circuit and the second gate drive circuit, wherein
the controller is configured to, at a time of turning on the dual-gate bidirectional switch and when a potential of the first source is lower than a potential of the second source, apply a first positive voltage between the first gate and the first source from the first gate drive circuit for a first period, and apply a voltage smaller than the first positive voltage after the first period has elapsed,
the dual-gate bidirectional switch further includes:
a substrate,
a first nitride semiconductor layer disposed on the substrate,
a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap larger than a bandgap of the first nitride semiconductor layer,
a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode, which are disposed on the second nitride semiconductor layer,
a first p-type layer interposed between the first gate electrode and the second nitride semiconductor layer, and
a second p-type layer interposed between the second gate electrode and the second nitride semiconductor layer,
the first gate includes the first gate electrode and the first p-type layer,
the second gate includes the second gate electrode and the second p-type layer,
the first gate drive circuit includes:
a first series circuit connected between the first gate and the first source and including:
a positive power supply,
a first switch,
a capacitor, and
a first resistor, and
a second resistor connected in parallel to a series circuit of the capacitor and the first resistor,
the first resistor has a resistance value smaller than a resistance value of the second resistor, and
the controller controls the first switch.