| CPC H10D 62/149 (2025.01) [H01L 21/30604 (2013.01); H01L 21/3065 (2013.01); H10D 30/01 (2025.01)] | 20 Claims |
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1. A semiconductor device, comprising:
a substrate comprising a plurality of recesses and a plurality of convex portions, wherein each of the convex portions is located between the two adjacent recesses, each of a sidewall of the recesses includes at least two concave portions, each of the concave portions comprises a first inclined plane and an adjacent second inclined plane, and the second inclined plane of one of the concave portions is adjacent to a first inclined plane of another one of the concave portions, such that the sidewall has a zig-zag shape;
a plurality of epitaxial structures located in the recesses of the substrate respectively, wherein top surfaces of the epitaxial structures are higher than top surfaces of the convex portions of the substrate; and
a plurality of gate structures located on the convex portions of the substrate respectively wherein sidewalls gate structures are in contact with the epitaxial structures.
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16. A manufacturing method of a semiconductor device, comprising:
forming a shallow trench isolation (STI), a plurality of gate structures and a plurality of first transition recesses on a substrate, wherein the first transition recesses are located between the gate structures and between the STI and the gate structures closest to the STI;
etching the first transition recesses to form a plurality of second transition recesses, wherein a sidewall of each of the second transition recesses has a concave portion, wherein the concave portion comprises a first inclined plane and an adjacent second inclined plane;
after etching the first transition recesses, implanting an ion to the second transition recesses;
after implanting the ion to the second transition recesses, etching the second transition recesses to form a plurality of recesses respectively, such that a sidewall of each of the recesses forms another concave portion, wherein the concave portions comprises a first inclined plane and an adjacent second inclined plane respectively, the second inclined plane of one of the concave portions is adjacent to a first inclined plane of another one of the concave portions, such that the sidewall has a zig-zag shape; and
after etching the second transition recesses, growing a plurality of epitaxial structures in the recesses respectively.
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