US 12,446,277 B2
Semiconductor device and method of fabricating the same
Beomjin Park, Hwaseong-si (KR); Myung Gil Kang, Suwon-si (KR); Daewon Kim, Hwaseong-si (KR); Dongwon Kim, Seongnam-si (KR); Jaehoon Shin, Suwon-si (KR); and Keun Hwi Cho, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 7, 2022, as Appl. No. 17/859,242.
Claims priority of application No. 10-2021-0127459 (KR), filed on Sep. 27, 2021.
Prior Publication US 2023/0107537 A1, Apr. 6, 2023
Int. Cl. H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01)
CPC H10D 62/121 (2025.01) [H10D 30/43 (2025.01); H10D 30/6713 (2025.01); H10D 30/6757 (2025.01); H10D 64/021 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate that includes a first region and a second region;
a first active pattern on the first region and a second active pattern on the second region;
a first gate electrode on the first active pattern and a second gate electrode on the second active pattern; and
a first cutting pattern that penetrates the first gate electrode and a second cutting pattern that penetrates the second gate electrode,
wherein:
a width of the first gate electrode as measured in a first one direction is less than a width of the second gate electrode as measured in the first one direction,
a maximum width of the first cutting pattern as measured in the first one direction is greater than the width of the first gate electrode as measured in the first one direction, and
a minimum width of the second cutting pattern as measured in the first one direction is less than the width of the second gate electrode as measured in the first one direction.