US 12,446,276 B2
Semiconductor devices and methods of manufacturing thereof
Hsin-Chieh Huang, Taoyuan (TW); Chia-Cheng Chao, Hsinchu (TW); and Yu-Wen Wang, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Oct. 1, 2021, as Appl. No. 17/492,315.
Claims priority of provisional application 63/178,258, filed on Apr. 22, 2021.
Prior Publication US 2022/0344460 A1, Oct. 27, 2022
Int. Cl. H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01)
CPC H10D 62/118 (2025.01) [H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first channel structure extending along a first direction;
a second channel structure extending along the first direction and spaced apart from the first channel structure;
a high-k dielectric structure extending along the first direction and disposed between the first and second channel structures; and
a gate cut structure comprising an insulating material;
wherein the high-k dielectric structure has a bottom surface that comprises a bottommost portion and at least a first plateau portion elevated from the bottommost portion, and a top surface in contact with the gate cut structure, wherein the bottom surface further comprises a first tilted portion and a second tilted portion.