| CPC H10D 62/115 (2025.01) [H10D 84/0188 (2025.01); H10D 84/0191 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01); H10D 84/854 (2025.01); H10D 30/751 (2025.01); H10D 84/0167 (2025.01); H10D 86/011 (2025.01); H10D 86/215 (2025.01)] | 20 Claims |
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1. A device, comprising:
a substrate comprising a first well and a second well;
a first semiconductor fin and a second semiconductor fin over the substrate, wherein an upper portion of the second semiconductor fin and a lower portion of the second semiconductor fin are made of different materials, and wherein the first semiconductor fin is disposed on the first well, and the second semiconductor fin is disposed on the second well;
a first epitaxy structure over the first semiconductor fin;
a second epitaxy structure in contact with the upper portion of the second semiconductor fin, wherein sidewalls of the lower portion of the second semiconductor fin are free of coverage by the second epitaxy structure, and wherein the second well, the second semiconductor fin, and the second epitaxy structure comprise a same type dopant;
a liner in contact with the sidewalls of the lower portion of the second semiconductor fin; and
an isolation structure between the first and second semiconductor fin, wherein the isolation structure is in contact with the first semiconductor fin and is separated from the second semiconductor fin through the liner, wherein a bottommost surface of the isolation structure is coterminous with a bottommost surface of the liner, and wherein the isolation structure has an oxide material in contact with the liner, and wherein a boundary between the liner and the isolation structure is aligned with a boundary between the first well and the second well.
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