US 12,446,271 B2
Semiconductor device structure and methods of forming the same
Chun-Sheng Liang, Changhua (TW); and Hong-Chih Chen, Changhua (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jan. 15, 2023, as Appl. No. 18/097,253.
Prior Publication US 2024/0105786 A1, Mar. 28, 2024
Int. Cl. H10D 62/00 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H10D 62/021 (2025.01) [H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 84/013 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
8. A semiconductor device structure, comprising:
a first source/drain (S/D) region disposed over a substrate;
a second S/D region disposed over the substrate;
a dielectric wall disposed between the first and second S/D regions;
a first conductive contact disposed over and electrically connected to the first S/D region;
a second conductive contact disposed over and electrically connected to the second S/D region;
a first dielectric material disposed between the first and second conductive contacts, wherein the first dielectric material has a top surface substantially coplanar with a top surface of the first conductive contact, and the first dielectric material extends to a level located below a bottom surface of the first conductive contact; and
an interlayer dielectric (ILD) layer disposed under the first conductive contact, wherein the first dielectric material and the ILD layer comprise different materials.