| CPC H10D 30/796 (2025.01) [H10B 12/50 (2023.02); H10D 62/151 (2025.01)] | 20 Claims |
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1. A semiconductor device comprising:
a substrate;
device isolation films defining an active region in the substrate;
a gate pattern in the active region; and
source/drain regions on both sides of the gate pattern, in the active region,
wherein the source/drain regions include first parts, which comprise carbon monoxide (CO) ions, and
wherein the source/drain regions further include second parts on top of the first parts, and the second parts are doped with a different material than CO.
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