US 12,446,260 B2
Thin film transistor and display apparatus comprising the same
Sunggu Kim, Paju-si (KR); and DaeHwan Kim, Paju-si (KR)
Assigned to LG DISPLAY CO., LTD., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Sep. 2, 2022, as Appl. No. 17/902,513.
Claims priority of application No. 10-2021-0117834 (KR), filed on Sep. 3, 2021; and application No. 10-2022-0000011 (KR), filed on Jan. 1, 2022.
Prior Publication US 2023/0076003 A1, Mar. 9, 2023
Int. Cl. H01L 27/32 (2006.01); H01L 29/423 (2006.01); H10D 30/67 (2025.01); H10K 59/126 (2023.01)
CPC H10D 30/673 (2025.01) [H10D 30/6723 (2025.01); H10D 30/6755 (2025.01); H10K 59/126 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A thin film transistor comprising:
a light shielding layer on a substrate;
a buffer layer on the light shielding layer;
an active layer on the buffer layer;
a gate insulating layer on the active layer; and
a gate electrode on the gate insulating layer,
wherein the gate electrode includes a first gate electrode opening disposed within the gate electrode, and
wherein the first gate electrode opening is not overlapped with the active layer.